IPP069N20NM6AKSA1 vs IRFB4020PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPP069N20NM6AKSA1 sa pamamagitan ng Infineon at IRFB4020PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPP069N20NM6AKSA1 IRFB4020PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC=25C 136 A —
Continuous Drain Current (ID) at TA=25C 15.3 A —
Power Dissipation (PD) at TC=25C 300 W —
Power Dissipation (PD) at TA=25C 3.8 W —
On-Resistance RDS(on) max at VGS=10V 6.9 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Technology OptiMOS 6 trench MOSFET IR MOSFET (HEXFET)
Tindminan RoHS Compliant —
Lead-Free Yes —
Level ng MSL N/A (through-hole package) —
Tab Connection Electrically connected to Drain —
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Temperature ng Junction na Operasyon — 175 C (max)
Bilang ng Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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