IPW60R190C6FKSA1 - 600V CoolMOS C6 MOSFET 190mΩ TO-247 | Infineon
MPN: IPW60R190C6FKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.12 | $31.20 |
| 100 | $2.78 | $278.00 |
| 500 | $2.41 | $1,205.00 |
| 1,000 | $2.05 | $2,050.00 |
IPW60R190C6FKSA1 Overview
A power MOSFET is a voltage-controlled three-terminal transistor that switches or amplifies current between its drain and source terminals when a sufficient gate-source voltage is applied. CoolMOS is Infineon's superjunction MOSFET family, which trades the exponential Rsp(on) vs. breakdown-voltage relationship of planar MOSFETs for a near-linear one, dramatically reducing conduction loss in 500-900 V applications. Within the discrete semiconductor hierarchy, this part sits between the parent category (MOSFET) and its application superclass (switch-mode power supply rectifier/switch). The C6 generation specifically targets hard-switched PFC and LLC topologies where low switching loss and avalanche ruggedness matter.
Key features include a low RDS(on) of 190 mΩ (max), a typical gate charge of approximately 63 nC, an integrated body diode with reverse recovery suited for bridge topologies, and a wide operating junction temperature range up to 150 °C. The C6 series also adds an improved dv/dt immunity and lower EOSS compared to C3 predecessors. The TO-247 package offers a thermal resistance around 0.83 K/W (junction-to-case), enabling high continuous power dissipation when mounted to a heatsink.
Technically, the device is built on Infineon's superjunction charge-compensation principle, which uses alternating P/N columns in the drift region to enable a thinner, lower-resistance epitaxial layer at a given voltage rating. The result is a lower specific on-resistance (Rsp(on)) per unit area and faster switching versus planar 600 V MOSFETs. The C6 generation further optimizes the source-cell layout to reduce gate charge and improve body-diode softness, which simplifies design in hard-switched bridge converters.
Typical applications include 600 V-class switch-mode power supplies (SMPS), power-factor correction (PFC) boost stages, LLC half-bridge resonant converters, solar inverters, induction-heating converters, and industrial welding equipment. The wide VDS rating and rugged avalanche performance make it a strong fit for off-line converters targeting ENERGY STAR and 80 PLUS efficiency levels.
Design consideration: at high line (e.g. 400 VDC bus), switching losses dominate; gate-drive tuning to a 10-12 V gate swing with a small external gate resistor minimizes turn-on loss without creating excessive dv/dt ringing. Heatsink sizing should use the manufacturer's thermal-resistance curve rather than the nominal 0.83 K/W because real-mount conditions degrade the junction-to-ambient figure.
This page synthesizes distributor pricing snapshots from DigiKey and Octopart, drop-in parts from the same TO-247-3 footprint, and practical application notes that go beyond what the manufacturer datasheet block diagram alone offers.
Drop-in alternatives for IPW60R190C6FKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPW60R190C6FKSA1 (same form factor and footprint) — differing in Mounting Type, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPW60R190C6
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R037P7XKSA1
✅ Drop-In✓ In Stock
$3.55 / Unit
View Datasheet →IPW60R040CFD7ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
STP24N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
NTPF082N65S3H
✅ Drop-In📋 Reference alternative (not in catalog)
IXFB110N60P3
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R190C6FKSA1 Maximum Ratings & Electrical Characteristics
| Technology | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 20.2 A |
| On-Resistance (RDS(on), max @ VGS=10V) | 190 mΩ |
| Power Dissipation (PD, Tc=25°C) | 151 W |
| Operating Junction Temperature | -55 °C to +150 °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.83 K/W |
| Package | TO-247-3 (PG-TO247-3-1) |
| Mounting Type | Through-Hole |
| Pin Count | 3 (+ tab) |
| MSL Level | N/A (through-hole) |
| RoHS Status | Compliant |
IPW60R190C6FKSA1 Pin Configuration
| Pin 1 | Gate — Gate control input; drive to 10-12V for full enhancement |
| Pin 2 | Drain — Power drain terminal; internally connected to the metal tab |
| Pin 3 | Source — Source terminal; return path for gate drive and load current |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPW60R190C6FKSA1 is suitable for 6 applications: Switch-Mode Power Supply (SMPS) Primary Side, Power-Factor Correction (PFC) Boost Stage, LLC Resonant Half-Bridge Converter, Solar Inverter DC-DC Stage, Industrial Induction Heating, Uninterruptible Power Supply (UPS) Inverter.
Switch-Mode Power Supply (SMPS) Primary Side
The IPW60R190C6FKSA1 is widely used as the main switching transistor in off-line flyback, forward, and half-bridge converters up to about 3 kW. Its 600 V VDS rating provides ample margin for universal-input AC-DC front ends (85-305 VAC) where the rectified bus peaks near 420 V. The 190 mΩ RDS(on) keeps conduction loss manageable at moderate duty cycles, while the C6 superjunction generation reduces turn-on loss compared to older planar 600 V MOSFETs. Mounted to a small extruded-aluminum heatsink, the part handles continuous conduction at the boundary between consumer and industrial power supply tiers. Compared to a Schottky-diode bridge front end, the CoolMOS C6 enables active PFC and synchronous rectification topologies that exceed 80 PLUS efficiency targets.
Recommended
Power-Factor Correction (PFC) Boost Stage
In continuous-conduction-mode (CCM) PFC boost converters from 1-3 kW, the IPW60R190C6FKSA1 switches at 65-130 kHz against a 400 VDC bus. The CoolMOS C6 generation's improved body-diode softness helps reduce reverse-recovery loss in the PFC rectifier bridge, while the 190 mΩ RDS(on) keeps efficiency above 95 percent at full load. The TO-247-3 package allows single-device designs at 2-3 kW without paralleling, simplifying PFC choke and gate-drive layout. For interleaved PFC topologies, two IPW60R190C6FKSA1 devices can be paralleled thanks to the part's positive temperature coefficient on resistance, which promotes natural current sharing.
Recommended
LLC Resonant Half-Bridge Converter
In LLC half-bridge resonant converters up to 2 kW (used in LED TV power supplies and audio amplifiers), the IPW60R190C6FKSA1 is paired with a low-side CoolMOS C6 of the same family. The superjunction technology enables zero-voltage switching (ZVS) at the resonant-tank crossover frequency, drastically reducing switching loss. The 190 mΩ RDS(on) is acceptable for resonant topologies because ZVS eliminates the turn-on transition where COSS normally charges. The 600 V rating easily supports 400 VDC bus with headroom for resonant-tank excursion above the bus voltage during start-up.
Recommended
Solar Inverter DC-DC Stage
String solar inverters up to 3 kW use the IPW60R190C6FKSA1 in the boost stage that elevates the panel-side voltage to the inverter DC bus. The 600 V rating handles the open-circuit voltage of two-series PV strings (Voc up to about 1000 V at cold ambient is split into two 600 V sections). The C6 superjunction process minimizes switching loss in the high-frequency boost stage, while the 190 mΩ RDS(on) keeps peak conversion efficiency above 98 percent. The TO-247-3 package supports the through-hole mounting preferred by industrial solar inverter designers for long-term field reliability.
Recommended
Industrial Induction Heating
Resonant induction-heating converters in the 1-5 kW class use the IPW60R190C6FKSA1 as the switching element in a half-bridge or full-bridge LC resonant tank operating at 20-100 kHz. The CoolMOS C6 generation's avalanche ruggedness and integrated body diode survive the high dv/dt events inherent to induction-heating resonant transitions. The 190 mΩ RDS(on) supports continuous RF-like current pulses while the TO-247-3 package handles thermal cycling from cold-start to steady-state cooking loads. The 600 V rating accommodates rectified mains up to 480 V three-phase input.
Recommended
Uninterruptible Power Supply (UPS) Inverter
Online double-conversion UPS systems in the 1-3 kVA class use the IPW60R190C6FKSA1 in the inverter bridge that synthesizes AC output from a 192-432 VDC battery bus. The 600 V rating comfortably handles the bus voltage of 32-cell lead-acid or 96-cell Li-ion battery stacks. The C6 superjunction technology provides the switching speed needed for sinusoidal PWM at 20 kHz to keep output filter inductors small. The 190 mΩ RDS(on) balances efficiency against cost, keeping total harmonic distortion (THD) below 3 percent for sinusoidal AC output at 1 kW load.
Recommended
Recommended Products Summary
Engineering reference data for IPW60R190C6FKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPW60R190C6 | IPW60R037P7XKSA1 | IPW60R040CFD7ATMA1 | STP24N60M2 | NTPF082N65S3H |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Package | TO-247-3 (PG-TO247-3-1) | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| VDS (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 650 V |
| RDS(on) max @ VGS=10V | 190 mΩ | 190 mΩ | 37 mΩ | 40 mΩ | 165 mΩ | 82 mΩ |
| Technology Generation | CoolMOS C6 (Superjunction) | CoolMOS C6 | CoolMOS P7 | CoolMOS CFD7 | MDmesh M2 | onsemi superjunction |
| Body Diode Hardness | Standard (snubber required in bridge topologies) | Standard | Improved (P7 generation) | Integrated fast body diode (CFD7) | Standard | Standard |
| Price Tier @ 1000pcs (USD) | $2.05 | $2.00 (est.) | $5.50 (est.) | $6.00 (est.) | $3.20 (est.) | $2.80 (est.) |
Key Differentiators
- Balanced RDS(on) vs cost at 600V (vs IPW60R037P7XKSA1)
- C6 generation avalanche ruggedness (vs STP24N60M2)
- Standard body diode vs CFD7 integrated fast diode (vs IPW60R040CFD7ATMA1)
- 190 mΩ vs 82 mΩ - cost-driven design trade-off (vs NTPF082N65S3H)
Design Notes
At full-load PFC operation (400 VDC bus, 10 A continuous drain current), the IPW60R190C6FKSA1 dissipates approximately I² × RDS(on) = 10² × 0.19 = 19 W of conduction loss. With RθJC = 0.83 K/W, the junction-to-case temperature rise is about 16 °C. Mount the TO-247-3 to a heatsink with RθSA ≤ 4 K/W to keep Tj below 125 °C at 50 °C ambient. A small thermal pad rated for 6 W/m-K (e.g., Bergquist GP1500) avoids compound-thermal penalties. Estimated thermal envelope based on datasheet RθJC; actual Tj depends on mounting torque and heatsink flatness.
Keep the gate-drive loop area below 1 cm² by placing the gate driver IC within 1 cm of the gate pin and using a Kelvin-source connection if available. For hard-switched PFC at 100 kHz, an external 10-33 Ω gate resistor reduces turn-on dv/dt to about 5 V/ns and suppresses ringing that can otherwise couple into the source-bonding wire. Place a 100 nF X7R bypass capacitor directly between VCC of the gate driver and the source terminal of the MOSFET, with traces shorter than 5 mm to minimize parasitic inductance in the gate-driver return path.
Do not parallel multiple IPW60R190C6FKSA1 devices without separate gate-source resistors for each part - parasitic source-inductance mismatch causes uneven switching and possible thermal runaway. The body diode of the C6 generation is rated for avalanche but is not as soft as a P7 or CFD7 part, so in half-bridge or full-bridge topologies, an external anti-parallel Schottky or SiC diode may be required to keep reverse-recovery losses in check. Also, do not exceed the absolute maximum gate-source voltage of ±20 V (or ±30 V on transient); a 12V Zener gate protection clamp is recommended for fault robustness.
Through-hole TO-247-3 mounting requires a hole pattern with 5.45 mm pin pitch and 3.0-3.5 mm hole diameter per JEDEC TO-247 outline. Provide a copper pad of at least 25 mm × 25 mm on each side of the board for heatsink mounting, and use plated-through thermal vias (12-25 vias of 0.3-0.5 mm diameter) under the metal tab to draw heat into internal copper planes. Keep high-voltage traces away from the gate pin by at least 4 mm to satisfy IEC 60950 / IEC 62368 clearance for 600 V working voltage.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q101 qualified - this is an industrial/consumer-grade part. For automotive MOSFETs from the same family, look for IPW60R190C6 automotive variants or P7/CFD7 automotive parts.
