IQD016N08NM5ATMA1 vs IQDH29NE2LM5CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQD016N08NM5ATMA1 sa pamamagitan ng Infineon at IQDH29NE2LM5CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon
IQDH29NE2LM5CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQD016N08NM5ATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 25 V |
| Continuous Drain Current (Ta) | 31 A | 75 A |
| Continuous Drain Current (Tc) | 323 A | 789 A |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 278 W |
| Packhaging | PG-TSON-8-9 (PQFN 5x6) | PG-WHTFN-9-U02 (WHTFN EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 Power-Transistor |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction, standard MOSFET rating) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | 2 V (typ) |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Bilang ng Pin | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |