IQD016N08NM5ATMA1 vs IQDH29NE2LM5CGSCATMA1 比較
詳細並排比較 IQD016N08NM5ATMA1 由 Infineon 與 IQDH29NE2LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQD016N08NM5ATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 25 V |
| Continuous Drain Current (Ta) | 31 A | 75 A |
| Continuous Drain Current (Tc) | 323 A | 789 A |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 278 W |
| 封裝 | PG-TSON-8-9 (PQFN 5x6) | PG-WHTFN-9-U02 (WHTFN EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 Power-Transistor |
| 工作溫度範圍 | -55C to +150C (junction, standard MOSFET rating) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | 2 V (typ) |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| 腳位數 | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |