IQDH88N06LM5SCATMA1 vs IQDH29NE2LM5CGSCATMA1 比較
詳細並排比較 IQDH88N06LM5SCATMA1 由 Infineon 與 IQDH29NE2LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ 啟用中規格比較
| 參數 | IQDH88N06LM5SCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IQDH88N06LM5SCATMA1 | — |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, Ta) | 42 A | — |
| Continuous Drain Current (ID, Tc) | 447 A | — |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V | — |
| Total Gate Charge (Qg) | 76 nC | — |
| Input Capacitance (Ciss) | 11 nF | — |
| Output Capacitance (Coss) | 2 nF | — |
| Reverse Transfer Capacitance (Crss) | 95 pF | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 278 W |
| 工作溫度範圍 | -55 C to +175 C | — |
| 封裝 | PG-WHSON-8-U02 (source-down, dual-side cooling) | PG-WHTFN-9-U02 (WHTFN EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| 腳位數 | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |