IQDH88N06LM5SCATMA1 vs IQDH29NE2LM5CGSCATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5SCATMA1 sa pamamagitan ng Infineon at IQDH29NE2LM5CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQDH88N06LM5SCATMA1 IQDH29NE2LM5CGSCATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IQDH88N06LM5SCATMA1 —
Series OptiMOS 5 —
Technology N-Channel MOSFET (OptiMOS 5) OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID, Ta) 42 A —
Continuous Drain Current (ID, Tc) 447 A —
On-State Resistance (RDS(on)) 0.7 mOhm at VGS = 10 V —
Gate-Source Voltage (VGS) +/- 20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V —
Total Gate Charge (Qg) 76 nC —
Input Capacitance (Ciss) 11 nF —
Output Capacitance (Coss) 2 nF —
Reverse Transfer Capacitance (Crss) 95 pF —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 333 W 278 W
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging PG-WHSON-8-U02 (source-down, dual-side cooling) PG-WHTFN-9-U02 (WHTFN EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
FET Type — N-Channel
Continuous Drain Current (Ta) — 75 A
Continuous Drain Current (Tc) — 789 A
Maximum On-Resistance RDS(on) — 0.29 mΩ
Gate Threshold Voltage VGS(th) — 2 V (typ)
Bilang ng Pin — 9
Cooling — Dual-side exposed pad (top + bottom)
Level ng MSL — [DATA_NEEDED: MSL rating]

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