IR2101STRPBF vs IR2101PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2101STRPBF sa pamamagitan ng Infineon at IR2101PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2101STRPBF IR2101PBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Half-Bridge (High-Side and Low-Side), Independent Half-Bridge (High and Low Side)
Number of Drivers 2 2 (High-Side + Low-Side)
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V, 5 V, 15 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Packhaging 8-SOIC (0.154 inch, 3.90 mm Width) 8-PDIP (0.300 inch, 7.62 mm)
Uri ng Pagpapasok Surface Mount Through-Hole
Temperature na Operasyon -40 C to +125 C -40C to +125C
Level ng MSL MSL 3 —
Tindminan RoHS Compliant Compliant (Pb-free PBF suffix)
Input Type — Non-Inverting
Bilang ng Outputs — 2
Supply Voltage (VCC/VBS) — 10 V to 20 V
Peak Source Current — 0.21 A (210 mA)
Peak Sink Current — 0.36 A
Offset (High-Side) Voltage — Up to +600 V
Propagation Delay — 160 ns
Undervoltage Lockout — Yes
dV/dt Immunity — Yes (negative transient tolerant)
Packaging — Tube

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