IR2101STRPBF vs IR2101PBF 比較

詳細並排比較 IR2101STRPBF 由 Infineon 與 IR2101PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2101STRPBF IR2101PBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge (High-Side and Low-Side), Independent Half-Bridge (High and Low Side)
Number of Drivers 2 2 (High-Side + Low-Side)
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V, 5 V, 15 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
封裝 8-SOIC (0.154 inch, 3.90 mm Width) 8-PDIP (0.300 inch, 7.62 mm)
安裝類型 Surface Mount Through-Hole
工作溫度 -40 C to +125 C -40C to +125C
MSL 等級 MSL 3 —
RoHS 狀態 Compliant Compliant (Pb-free PBF suffix)
Input Type — Non-Inverting
輸出數量 — 2
Supply Voltage (VCC/VBS) — 10 V to 20 V
Peak Source Current — 0.21 A (210 mA)
Peak Sink Current — 0.36 A
Offset (High-Side) Voltage — Up to +600 V
Propagation Delay — 160 ns
Undervoltage Lockout — Yes
dV/dt Immunity — Yes (negative transient tolerant)
Packaging — Tube

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