IRF7351TRPBF vs IRF7341GTRPBF Comparison

Detailed side-by-side comparison of IRF7351TRPBF by Infineon and IRF7341GTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7351TRPBF IRF7341GTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.76
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF7351TRPBF β€”
Configuration Dual N-Channel MOSFET (Half-Bridge) Dual N-Channel
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) 8 A 5.1 A
On-Resistance RDS(on) max 17.8 mOhm β€”
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) β€”
Total Gate Charge (Qg) 24 nC [DATA_NEEDED: Qg typical]
Power Dissipation (PD) 2 W 2.4 W
Technology IR MOSFET (HEXFET trench) IR HEXFET Planar MOSFET
Package 8-SO (SO-8 / SOIC-8) Surface Mount 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Typical Application Synchronous Rectifier for Isolated DC-DC Converters β€”
RoHS Status Compliant (PBF suffix = lead-free) Compliant
Lead-Free Yes Yes (PBF suffix)
MSL Level [DATA_NEEDED: MSL Level] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: typical VGS(th) value]
On-Resistance (RDS(on)) max β€” 50 mOhm at VGS=10V
Maximum Junction Temperature β€” 175 C
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss typical]
Operating Temperature Range β€” -55 C to +175 C

Datasheets & Resources

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