IRF7351TRPBF vs IRF7341GTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7351TRPBF sa pamamagitan ng Infineon at IRF7341GTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7351TRPBF IRF7341GTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) Dual N-Channel
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) 8 A 5.1 A
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC [DATA_NEEDED: Qg typical]
Power Dissipation (PD) 2 W 2.4 W
Technology IR MOSFET (HEXFET trench) IR HEXFET Planar MOSFET
Packhaging 8-SO (SO-8 / SOIC-8) Surface Mount 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
Tindminan RoHS Compliant (PBF suffix = lead-free) Compliant
Lead-Free Yes Yes (PBF suffix)
Level ng MSL [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: typical VGS(th) value]
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Maximum Junction Temperature — 175 C
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Hanay ng Temperature na Operasyon — -55 C to +175 C

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