IRF7351TRPBF vs IRF7341GTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7351TRPBF disebabkan oleh Infineon dan IRF7341GTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7351TRPBF IRF7341GTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) Dual N-Channel
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) 8 A 5.1 A
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC [DATA_NEEDED: Qg typical]
Power Dissipation (PD) 2 W 2.4 W
Technology IR MOSFET (HEXFET trench) IR HEXFET Planar MOSFET
Kemasan 8-SO (SO-8 / SOIC-8) Surface Mount 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
Status RoHS Compliant (PBF suffix = lead-free) Compliant
Lead-Free Yes Yes (PBF suffix)
Aras MSL [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: typical VGS(th) value]
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Maximum Junction Temperature — 175 C
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Gambaran Suhu Operasi — -55 C to +175 C

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