IRFP250MPBF vs IRFP2907PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP250MPBF disebabkan oleh Infineon dan IRFP2907PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP250MPBF IRFP2907PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $2.55 —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP250MPBF IRFP2907PBF
Jenis Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan / Case TO-247AC (3-pin + tab) —
Jenis Pemasangan Through Hole —
Bilangan Pin 3 —
Avalanche Rated Yes Yes (repetitive avalanche rated)
Status RoHS Compliant —
Lead-Free Yes Yes
Aras MSL 1 (unlimited) —
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
Kiraan Pin — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

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