IRFP250MPBF vs IRFP2907PBF 比較

詳細並排比較 IRFP250MPBF 由 Infineon 與 IRFP2907PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFP250MPBF IRFP2907PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) $2.55 —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP250MPBF IRFP2907PBF
電晶體類型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
工作接面溫度 -55C to +175C —
封裝 / 外殼 TO-247AC (3-pin + tab) —
安裝類型 Through Hole —
腳位數 3 —
Avalanche Rated Yes Yes (repetitive avalanche rated)
RoHS 狀態 Compliant —
Lead-Free Yes Yes
MSL 等級 1 (unlimited) —
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
腳位數 — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

資料表與資源

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