IRFP250MPBF vs IRFP2907PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP250MPBF sa pamamagitan ng Infineon at IRFP2907PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFP250MPBF IRFP2907PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) $2.55 —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP250MPBF IRFP2907PBF
Uri ng Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging / Kaso TO-247AC (3-pin + tab) —
Uri ng Pagpapasok Through Hole —
Bilang ng Pins 3 —
Avalanche Rated Yes Yes (repetitive avalanche rated)
Tindminan RoHS Compliant —
Lead-Free Yes Yes
Level ng MSL 1 (unlimited) —
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
Bilang ng Pin — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

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