IRFR3710ZTRPBF vs IRFR540ZTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3710ZTRPBF disebabkan oleh Infineon dan IRFR540ZTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR3710ZTRPBF IRFR540ZTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] 110 A
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: typical V]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
Suhu Hubungan Operasi -55C to +175C -55 °C to +175 °C
Technology HEXFET (IR MOSFET) IR MOSFET™ / HEXFET®
Kemasan TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Continuous Drain Current (ID) at TC — 35 A
Static Drain-Source On-Resistance (RDS(on)) — 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Total Gate Charge (Qg) — 39 nC
Power Dissipation (PD) at TC — 91 W
Kiraan Pin — 3 (Gate, Drain, Source)
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes (PBF suffix)
Packaging — Tape & Reel (TR-L), 800-piece leader/trailer

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