IRFR3710ZTRPBF vs IRFR540ZTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3710ZTRPBF sa pamamagitan ng Infineon at IRFR540ZTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR3710ZTRPBF | IRFR540ZTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | 110 A |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: typical V] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | -55 °C to +175 °C |
| Technology | HEXFET (IR MOSFET) | IR MOSFET™ / HEXFET® |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 28.5 mΩ max at VGS=10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±V rating] |
| Total Gate Charge (Qg) | — | 39 nC |
| Power Dissipation (PD) at TC | — | 91 W |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Packaging | — | Tape & Reel (TR-L), 800-piece leader/trailer |