IRFS7430TRL7PP vs IRF1018EPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFS7430TRL7PP sa pamamagitan ng Infineon at IRF1018EPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFS7430TRL7PP IRF1018EPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $0.38
Manufacturer Infineon Technologies —
Product Family StrongIRFET —
Series HEXFET —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc=25°C) 240 A —
Continuous Drain Current (I_D, Tc=100°C) [DATA_NEEDED: ID at Tc=100°C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: IDM pulse spec] —
R_DS(on) max (V_GS=10V) 1.2 mΩ (per family datasheet); 0.75 mΩ typical —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Q_g) 305 nC —
Power Dissipation (P_D, Tc=25°C) 375 W —
Temperature ng Junction na Operasyon -55°C to +175°C —
Packhaging D2PAK (TO-263-7), 7 leads + tab TO-220AB (through-hole, 3-lead)
Uri ng Pagpapasok Surface Mount Through Hole
Single Pulse Avalanche Energy (E_AS) 1454 mJ (per cross-reference test L=1mH) —
Tindminan RoHS Compliant Compliant
Level ng MSL MSL1 (per PartGenie) —
Technology — HEXFET (Power MOSFET)
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 79 A
Rds(on) max at Vgs=10V — 8.4 mOhm
Total Gate Charge (Qg) — 46 nC
Gate Drive Voltage (Vgs) — 10 V (optimized; +/-20 V max)
Power Dissipation (Pd) at Tc=25C — 110 W
Hanay ng Temperature na Operasyon — -55 C to +175 C (Tj)
Qualification — JEDEC (Industrial market)
Lead-Free (PBF suffix) — Yes
Bilang ng Pin — 3 (Gate, Drain, Source)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita