IRFS7430TRL7PP vs IRF1018EPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS7430TRL7PP disebabkan oleh Infineon dan IRF1018EPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFS7430TRL7PP IRF1018EPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.38
Manufacturer Infineon Technologies —
Product Family StrongIRFET —
Series HEXFET —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc=25°C) 240 A —
Continuous Drain Current (I_D, Tc=100°C) [DATA_NEEDED: ID at Tc=100°C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: IDM pulse spec] —
R_DS(on) max (V_GS=10V) 1.2 mΩ (per family datasheet); 0.75 mΩ typical —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Q_g) 305 nC —
Power Dissipation (P_D, Tc=25°C) 375 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan D2PAK (TO-263-7), 7 leads + tab TO-220AB (through-hole, 3-lead)
Jenis Pemasangan Surface Mount Through Hole
Single Pulse Avalanche Energy (E_AS) 1454 mJ (per cross-reference test L=1mH) —
Status RoHS Compliant Compliant
Aras MSL MSL1 (per PartGenie) —
Technology — HEXFET (Power MOSFET)
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 79 A
Rds(on) max at Vgs=10V — 8.4 mOhm
Total Gate Charge (Qg) — 46 nC
Gate Drive Voltage (Vgs) — 10 V (optimized; +/-20 V max)
Power Dissipation (Pd) at Tc=25C — 110 W
Gambaran Suhu Operasi — -55 C to +175 C (Tj)
Qualification — JEDEC (Industrial market)
Lead-Free (PBF suffix) — Yes
Kiraan Pin — 3 (Gate, Drain, Source)

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