IRFS7430TRL7PP vs IRF1018EPBF Perbandingan

Perbandingan bersamaan detil IRFS7430TRL7PP dari Infineon dan IRF1018EPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS7430TRL7PP IRF1018EPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,38
Manufacturer Infineon Technologies —
Product Family StrongIRFET —
Series HEXFET —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc=25°C) 240 A —
Continuous Drain Current (I_D, Tc=100°C) [DATA_NEEDED: ID at Tc=100°C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: IDM pulse spec] —
R_DS(on) max (V_GS=10V) 1.2 mΩ (per family datasheet); 0.75 mΩ typical —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Q_g) 305 nC —
Power Dissipation (P_D, Tc=25°C) 375 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket D2PAK (TO-263-7), 7 leads + tab TO-220AB (through-hole, 3-lead)
Tipe Mounting Surface Mount Through Hole
Single Pulse Avalanche Energy (E_AS) 1454 mJ (per cross-reference test L=1mH) —
Status RoHS Compliant Compliant
Level MSL MSL1 (per PartGenie) —
Technology — HEXFET (Power MOSFET)
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 79 A
Rds(on) max at Vgs=10V — 8.4 mOhm
Total Gate Charge (Qg) — 46 nC
Gate Drive Voltage (Vgs) — 10 V (optimized; +/-20 V max)
Power Dissipation (Pd) at Tc=25C — 110 W
Rentang Suhu Kerja — -55 C to +175 C (Tj)
Qualification — JEDEC (Industrial market)
Lead-Free (PBF suffix) — Yes
Jumlah Pin — 3 (Gate, Drain, Source)

Spek dan Sumber

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