IRLHS6242TRPBF vs IRLML2803TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLHS6242TRPBF disebabkan oleh Infineon dan IRLML2803TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLHS6242TRPBF | IRLML2803TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | IR MOSFET Generation V |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Gate-to-Source Voltage (VGS) | ±12 V | — |
| Continuous Drain Current (TA) | 10 A | — |
| Continuous Drain Current (TC) | 12 A | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ | — |
| Total Gate Charge (Qg) | 14 nC | — |
| Power Dissipation (TA) | 1.98 W | — |
| Power Dissipation (TC) | 9.6 W | — |
| Kemasan | 6-PQFN (2x2) / DFN2020 with exposed pad | Micro3 / SOT-23 (3-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55°C to +150°C | — |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | Logic-level (driven from 3.3V / 5V) |
| Qualification | JEDEC standard | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2803TRPBF |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| Gambaran Suhu Operasi | — | -55C to +150C (TJ) |
| Aras MSL | — | 1 |
| RoHS Compliance | — | Compliant, Halogen-Free |