IRLHS6242TRPBF vs IRLML2803TRPBF Perbandingan
Perbandingan bersamaan detil IRLHS6242TRPBF dari Infineon dan IRLML2803TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLHS6242TRPBF | IRLML2803TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | IR MOSFET Generation V |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Gate-to-Source Voltage (VGS) | ±12 V | — |
| Continuous Drain Current (TA) | 10 A | — |
| Continuous Drain Current (TC) | 12 A | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ | — |
| Total Gate Charge (Qg) | 14 nC | — |
| Power Dissipation (TA) | 1.98 W | — |
| Power Dissipation (TC) | 9.6 W | — |
| Paket | 6-PQFN (2x2) / DFN2020 with exposed pad | Micro3 / SOT-23 (3-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55°C to +150°C | — |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | Logic-level (driven from 3.3V / 5V) |
| Qualification | JEDEC standard | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2803TRPBF |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| Rentang Suhu Kerja | — | -55C to +150C (TJ) |
| Level MSL | — | 1 |
| RoHS Compliance | — | Compliant, Halogen-Free |