IRLML2803TRPBF vs IRLML2030TRPBF 比較

詳細並排比較 IRLML2803TRPBF 由 Infineon 與 IRLML2030TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML2803TRPBF IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF ✓ 啟用中
Infineon
IRLML2030TRPBF IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF ✓ 啟用中

規格比較

參數 IRLML2803TRPBF IRLML2030TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRLML2803TRPBF IRLML2030TRPBF
電晶體類型 N-Channel MOSFET —
Technology IR MOSFET Generation V HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.2 A —
On-Resistance RDS(on) at VGS=4.5V 250 mOhm maximum —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate Charge (Qg) 3.3 nC typical —
Power Dissipation (PD) at TA=25C 540 mW —
封裝 Micro3 / SOT-23 (3-pin) Micro3 (SOT-23)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (TJ) —
Gate Drive Level Logic-level (driven from 3.3V / 5V) —
MSL 等級 1 MSL 1
RoHS Compliance Compliant, Halogen-Free Yes (lead-free, halogen-free)
FET Type — N-Channel
Continuous Drain Current (ID) at Ta — 2.7 A
Power Dissipation (PD) at Ta — 1.3 W
On-Resistance RDS(on) max @ VGS=10V — 100 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — 154 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Charge (Qg) typ — 1.0 nC
工作溫度 — -55C to +150C (junction)
Qualification — JEDEC standard
Soldering — Wave-solder compatible

資料表與資源

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