IRLML2803TRPBF vs IRLML2030TRPBF Perbandingan
Perbandingan bersamaan detil IRLML2803TRPBF dari Infineon dan IRLML2030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML2803TRPBF | IRLML2030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLML2803TRPBF | IRLML2030TRPBF |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Paket | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| Level MSL | 1 | MSL 1 |
| RoHS Compliance | Compliant, Halogen-Free | Yes (lead-free, halogen-free) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| Suhu Kerja | — | -55C to +150C (junction) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |