IRLML2803TRPBF vs IRLML2030TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML2803TRPBF sa pamamagitan ng Infineon at IRLML2030TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML2803TRPBF | IRLML2030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLML2803TRPBF | IRLML2030TRPBF |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Packhaging | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| Level ng MSL | 1 | MSL 1 |
| RoHS Compliance | Compliant, Halogen-Free | Yes (lead-free, halogen-free) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| Temperature na Operasyon | — | -55C to +150C (junction) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |