ISC058N04NM5ATMA1 vs IQE004NE1LM7CGATMA1 Comparison
Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and IQE004NE1LM7CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC058N04NM5ATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 15 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | 2.1 W |
| Power Dissipation (TC=25C) | 42 W | 89 W |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TTFN-9-3 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | N-Channel Trench Power MOSFET |
| Operating Temperature Range | -55C to +175C | — |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID, TA=25C) | — | 58 A |
| Continuous Drain Current (ID, TC=25C) | — | 379 A |
| On-Resistance RDS(on) max | — | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Operating Temperature | — | -55C to +150C (junction) |
| RoHS Status | — | Compliant |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Packaging | — | Tape & Reel (CGATMA1 suffix) |
| Polarization | — | N-Channel |