ISC058N04NM5ATMA1 vs IQE004NE1LM7CGATMA1 Perbandingan
Perbandingan bersamaan detil ISC058N04NM5ATMA1 dari Infineon dan IQE004NE1LM7CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC058N04NM5ATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 15 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | 2.1 W |
| Power Dissipation (TC=25C) | 42 W | 89 W |
| Paket | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TTFN-9-3 (surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | N-Channel Trench Power MOSFET |
| Rentang Suhu Kerja | -55C to +175C | — |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID, TA=25C) | — | 58 A |
| Continuous Drain Current (ID, TC=25C) | — | 379 A |
| On-Resistance RDS(on) max | — | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Suhu Kerja | — | -55C to +150C (junction) |
| Status RoHS | — | Compliant |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Packaging | — | Tape & Reel (CGATMA1 suffix) |
| Polarization | — | N-Channel |