ISC058N04NM5ATMA1 vs IQE004NE1LM7CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC058N04NM5ATMA1 disebabkan oleh Infineon dan IQE004NE1LM7CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC058N04NM5ATMA1 IQE004NE1LM7CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 15 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W 2.1 W
Power Dissipation (TC=25C) 42 W 89 W
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TTFN-9-3 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET N-Channel Trench Power MOSFET
Gambaran Suhu Operasi -55C to +175C —
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Series — OptiMOS 7
Continuous Drain Current (ID, TA=25C) — 58 A
Continuous Drain Current (ID, TC=25C) — 379 A
On-Resistance RDS(on) max — 0.45 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Suhu Operasi — -55C to +150C (junction)
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL rating]
Packaging — Tape & Reel (CGATMA1 suffix)
Polarization — N-Channel

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