ISC058N04NM5ATMA1 vs IQE004NE1LM7CGATMA1 比較

詳細並排比較 ISC058N04NM5ATMA1 由 Infineon 與 IQE004NE1LM7CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ 啟用中

規格比較

參數 ISC058N04NM5ATMA1 IQE004NE1LM7CGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 15 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W 2.1 W
Power Dissipation (TC=25C) 42 W 89 W
封裝 PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TTFN-9-3 (surface mount)
安裝類型 Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET N-Channel Trench Power MOSFET
工作溫度範圍 -55C to +175C —
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Series — OptiMOS 7
Continuous Drain Current (ID, TA=25C) — 58 A
Continuous Drain Current (ID, TC=25C) — 379 A
On-Resistance RDS(on) max — 0.45 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
工作溫度 — -55C to +150C (junction)
RoHS 狀態 — Compliant
MSL 等級 — [DATA_NEEDED: MSL rating]
Packaging — Tape & Reel (CGATMA1 suffix)
Polarization — N-Channel

資料表與資源

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