ISZ025N06NM6ATMA1 vs ISZ072N06NM6ATMA1 Comparison

Detailed side-by-side comparison of ISZ025N06NM6ATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ025N06NM6ATMA1

ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon

ISZ025N06NM6ATMA1 βœ“ Active
Infineon
ISZ072N06NM6ATMA1

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ025N06NM6ATMA1 ISZ072N06NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60 V OptiMOS 6 60V
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc=25Β°C) 137 A 57 A
Continuous Drain Current (ID, Ta) 22 A 12.7 A
Maximum RDS(on) at VGS=10V 2.5 mΞ© β€”
Gate Threshold Voltage (VGS(th), typ) 3.3 V β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 100 W β€”
Package PG-TSDSON-8-34 (5x6 mm) PG-TSDSON-8-34 (TSDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C -55C to +175C ( Tj max 175C )
Gate Drive Voltage (VGS) Β±20 V max β€”
Technology Trench MOSFET OptiMOS 6 trench MOSFET
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] 1
RDS(on) max @ VGS=10V β€” 7.2 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 3.3 V (typ)
Power Dissipation (Tc=25Β°C) β€” 50 W

Datasheets & Resources

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