ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ITS4200SMENHUMA1 sa pamamagitan ng Infineon at BSR315PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ITS4200SMENHUMA1 - 700mA 41V Smart High-Side Switch | Infineon
ITS4200SMENHUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | ITS4200SMENHUMA1 | BSR315PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Smart High-Side Power Switch | — |
| Topolohiya | N-Channel MOSFET, High-Side | — |
| Nominal Load Current | 0.7 A | — |
| On-State Resistance (Ron) | [DATA_NEEDED: Ron typ/max] | — |
| Operating Voltage Range | 5 V to 41 V | — |
| Overvoltage Protection (Load Dump) | 41 V | — |
| Input Logic Level | CMOS-compatible | — |
| Short-Circuit Protection | Yes (current limitation) | — |
| Thermal Shutdown | Yes (with restart) | — |
| Undervoltage Shutdown | Yes | — |
| Open-Load Detection | Yes (OFF-state diagnostic) | — |
| Status / Diagnostic Output | Yes | — |
| Quiescent Current (standby) | [DATA_NEEDED: Iq typ] | — |
| Hanay ng Temperature na Operasyon | -40 C to +125 C (industrial) | -55 C to +150 C (TJ) |
| Packhaging | SOT-223-4 (PG-SOT223-4) | PG-SC59-3 / SOT-23-3 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Family | PROFET™ Industrial | — |
| Channel Count | 1 | — |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualified | No (industrial grade only) | Yes (per Infineon product family marking) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR315PH6327XTSA1 |
| Series | — | OptiMOS P-Channel |
| FET Type | — | P-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max VGS) |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| Bilang ng Pin | — | 3 |
| Packaging | — | Tape & Reel (TR) |