ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ITS4200SMENHUMA1 disebabkan oleh Infineon dan BSR315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ITS4200SMENHUMA1 BSR315PH6327XTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers MOSFETs
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch —
Tetstruktur N-Channel MOSFET, High-Side —
Nominal Load Current 0.7 A —
On-State Resistance (Ron) [DATA_NEEDED: Ron typ/max] —
Operating Voltage Range 5 V to 41 V —
Overvoltage Protection (Load Dump) 41 V —
Input Logic Level CMOS-compatible —
Short-Circuit Protection Yes (current limitation) —
Pengumpasan Panas Yes (with restart) —
Undervoltage Shutdown Yes —
Open-Load Detection Yes (OFF-state diagnostic) —
Status / Diagnostic Output Yes —
Quiescent Current (standby) [DATA_NEEDED: Iq typ] —
Gambaran Suhu Operasi -40 C to +125 C (industrial) -55 C to +150 C (TJ)
Kemasan SOT-223-4 (PG-SOT223-4) PG-SC59-3 / SOT-23-3
Jenis Pemasangan Surface Mount Surface Mount
Family PROFET™ Industrial —
Channel Count 1 —
Status RoHS Compliant Compliant
Automotive Qualified No (industrial grade only) Yes (per Infineon product family marking)
Manufacturer — Infineon Technologies
Part Number — BSR315PH6327XTSA1
Series — OptiMOS P-Channel
FET Type — P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Kiraan Pin — 3
Packaging — Tape & Reel (TR)

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