ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil ITS4200SMENHUMA1 dari Infineon dan BSR315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ITS4200SMENHUMA1 BSR315PH6327XTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers MOSFETs
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch —
Topologi N-Channel MOSFET, High-Side —
Nominal Load Current 0.7 A —
On-State Resistance (Ron) [DATA_NEEDED: Ron typ/max] —
Operating Voltage Range 5 V to 41 V —
Overvoltage Protection (Load Dump) 41 V —
Input Logic Level CMOS-compatible —
Short-Circuit Protection Yes (current limitation) —
Penutupan Panas Yes (with restart) —
Undervoltage Shutdown Yes —
Open-Load Detection Yes (OFF-state diagnostic) —
Status / Diagnostic Output Yes —
Quiescent Current (standby) [DATA_NEEDED: Iq typ] —
Rentang Suhu Kerja -40 C to +125 C (industrial) -55 C to +150 C (TJ)
Paket SOT-223-4 (PG-SOT223-4) PG-SC59-3 / SOT-23-3
Tipe Mounting Surface Mount Surface Mount
Family PROFET™ Industrial —
Channel Count 1 —
Status RoHS Compliant Compliant
Automotive Qualified No (industrial grade only) Yes (per Infineon product family marking)
Manufacturer — Infineon Technologies
Part Number — BSR315PH6327XTSA1
Series — OptiMOS P-Channel
FET Type — P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Jumlah Pin — 3
Packaging — Tape & Reel (TR)

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