K4A4G165WF-BCWE vs K4A4G165WD-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WF-BCWE sa pamamagitan ng Samsung Electronics at K4A4G165WD-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G165WF-BCWE | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $10.65 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Rate ng Data | 3200 Mbps | 2133 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Volte ng Pagbibigay | 1.2 V (1.14 V to 1.26 V) | — |
| Access Time | 19 ns | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Packhaging | FBGA-96 (TFBGA) | FBGA-96 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel | DDR4 (synchronous, source-synchronous strobe) |
| Die Generation | Samsung F-die | D-die |
| Data Mask | Supported (DM) | — |
| ZQ Calibration | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| CRC | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| Tindminan RoHS | Compliant (per JLCPCB listing) | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Core Voltage | — | 1.2 V |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |