K4A4G165WF-BCWE vs K4A4G165WD-BCPB Perbandingan
Perbandingan bersamaan detil K4A4G165WF-BCWE dari Samsung Electronics dan K4A4G165WD-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WF-BCWE | K4A4G165WD-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $10,65 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 3200 Mbps | 2133 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | — |
| Access Time | 19 ns | — |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Paket | FBGA-96 (TFBGA) | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel | DDR4 (synchronous, source-synchronous strobe) |
| Die Generation | Samsung F-die | D-die |
| Data Mask | Supported (DM) | — |
| ZQ Calibration | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| CRC | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Core Voltage | — | 1.2 V |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |