K4B4G1646D-BMH9 vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BMH9 by Samsung Electronics and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646D-BMH9 | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Data Rate | 2133 Mb/s per pin | 1600 Mbps (PC3-12800) |
| Supply Voltage (VDD) | 1.35V | — |
| Supply Voltage (VDDQ) | 1.35V | — |
| Package | 96-ball FBGA (9x13mm) | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| CAS Latency | Programmable | Programmable (e.g., 11, 10, 9) |
| Burst Length | 8 and 4 | 8 (with burst chop 4) |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Supply Voltage | — | 1.35 V (1.5 V compatible) |
| On-Die Termination | — | Yes |
| RoHS Compliant | — | Yes |
| Number of Pins | — | 96 |
| Die Revision | — | D-die |