MT41K256M16TW-093 vs K4B4G1646Q Comparison
Detailed side-by-side comparison of MT41K256M16TW-093 by Micron Technology and K4B4G1646Q by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MT41K256M16TW-093 ✓ Active
Specification Comparison
| Parameter | MT41K256M16TW-093 | K4B4G1646Q |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $15.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | — |
| Data Bus Width | 16 bit | 16 bits |
| Clock Frequency | 1.066 GHz | — |
| Data Rate | 2133 MT/s | 1866 Mbps (PC3-14900) |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| Interface Type | Parallel | — |
| Package | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature Range | 0°C to +95°C (TC) | — |
| RoHS Status | Compliant | — |
| REACH Status | Compliant | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Density | — | 4Gb |
| Organization | — | 256M x 16 |
| Die | — | Q-die |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| CAS Latency | — | Programmable |
| Operating Temperature | — | [DATA_NEEDED: Operating temperature range] |