NT5AD512M16A4-GZ vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5AD512M16A4-GZ disebabkan oleh Nanya Technology dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5AD512M16A4-GZ | H5AN8G6NDJR |
|---|---|---|
| Merek | Nanya Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Organisasi | 512M x 16 | 512M x 16 |
| Density | 8Gb | 8 Gb |
| Tegangan Pemberi Arus | 1.2V | 1.2 V |
| Frekuensi Klock Maksimum | 1200 MHz | — |
| Lebar Bus Data | 16 bits | — |
| Kemasan | TFBGA-96 | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | Multi Bank Page Burst |
| Gambaran Suhu Operasi | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Kadar Data | — | 3200 Mbps (DDR4-3200) |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| JESD-30 Code | — | R-PBGA-B96 |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |