NT5AD512M16A4-GZ vs H5AN8G6NDJR Perbandingan
Perbandingan bersamaan detil NT5AD512M16A4-GZ dari Nanya Technology dan H5AN8G6NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | NT5AD512M16A4-GZ | H5AN8G6NDJR |
|---|---|---|
| Merek | Nanya Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Organisasi | 512M x 16 | 512M x 16 |
| Density | 8Gb | 8 Gb |
| Tegangan Pemuat | 1.2V | 1.2 V |
| Frekuensi Bawah Maximum | 1200 MHz | — |
| Lebar Bus Data | 16 bits | — |
| Paket | TFBGA-96 | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | Multi Bank Page Burst |
| Rentang Suhu Kerja | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Laju Data | — | 3200 Mbps (DDR4-3200) |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| JESD-30 Code | — | R-PBGA-B96 |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |