W634GU6RB09I vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of W634GU6RB09I by Winbond and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | W634GU6RB09I | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Winbond | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | — |
| Memory Size | 4Gbit (256M x 16) | — |
| Data Bus Width | 16 bit | — |
| Clock Frequency | 1.067 GHz | — |
| CAS Latency | 20 ns | Programmable |
| Supply Voltage | 1.35 V | 1.35 V |
| Package | 96-VFBGA (7.5x13 mm) | 96FBGA |
| Operating Temperature | -40C to +95C | 0 ~ 85 °C |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Interface | Parallel | — |
| Access Time | 20 ns | — |
| Organization | 256M x 16 | 256M x 16 |
| Voltage - I/O | 1.35 V | — |
| Density | — | 4 Gb |
| Data Rate | — | 1333 Mbps |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |