IR2011STRPBF vs IRS2011STRPBF Vergleich
Detaillierter Direktvergleich von IR2011STRPBF von Infineon und IRS2011STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2011STRPBF | IRS2011STRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $1,55 |
| Configuration | High-Side and Low-Side (Independent) | High-Side and Low-Side, Independent Channels |
| Number of Drivers | 2 (Half-Bridge) | — |
| Peak Source Current | 1 A (typical) | — |
| Peak Sink Current | 1 A (typical) | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Floating Supply Voltage (VBS) | 10 V to 20 V (operational to +200 V) | — |
| Logic Input Compatibility | 3.0 V CMOS or LSTTL | 3.3 V CMOS / LSTTL |
| Propagation Delay (typ.) | 80 ns | — |
| Turn-On Rise Time (typ.) | 35 ns | — |
| Turn-Off Fall Time (typ.) | 20 ns | — |
| Offset Voltage Rating | 200 V | — |
| Negative Transient Tolerance | dV/dt immune | Yes, dV/dt immune |
| Betriebstemperatur | -40 C to +125 C | -40 C to +125 C |
| Gehäuse | 8-SOIC (3.90 mm body width) | 8-SOIC (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant | — |
| Funktion | — | Half-Bridge Gate Driver |
| Anzahl der Ausgänge | — | 2 |
| Maximum Offset Voltage (High-Side) | — | 200 V |
| Output Current (Source / Sink) | — | 1 A typical / 1 A typical |
| Propagation Delay (ton/toff) | — | 60 ns typical |
| Delay Matching | — | 20 ns maximum |
| Bootstrap Supply | — | Integrated bootstrap diode, floating channel |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| RoHS-Status | — | Compliant (PBF suffix) |
| Suitable Drivers | — | MOSFETs and IGBTs |