IR2011STRPBF vs IRS2011STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2011STRPBF disebabkan oleh Infineon dan IRS2011STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2011STRPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side and Low-Side (Independent) High-Side and Low-Side, Independent Channels
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune Yes, dV/dt immune
Suhu Operasi -40 C to +125 C -40 C to +125 C
Kemasan 8-SOIC (3.90 mm body width) 8-SOIC (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Fungsi — Half-Bridge Gate Driver
Bilangan Output — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Status RoHS — Compliant (PBF suffix)
Suitable Drivers — MOSFETs and IGBTs

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