IR2011STRPBF vs IRS2011STRPBF 비교
다음의 상세 나란히 비교: IR2011STRPBF 제조: Infineon 및 IRS2011STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IR2011STRPBF | IRS2011STRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.71 | $1.55 |
| Configuration | High-Side and Low-Side (Independent) | High-Side and Low-Side, Independent Channels |
| Number of Drivers | 2 (Half-Bridge) | — |
| Peak Source Current | 1 A (typical) | — |
| Peak Sink Current | 1 A (typical) | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Floating Supply Voltage (VBS) | 10 V to 20 V (operational to +200 V) | — |
| Logic Input Compatibility | 3.0 V CMOS or LSTTL | 3.3 V CMOS / LSTTL |
| Propagation Delay (typ.) | 80 ns | — |
| Turn-On Rise Time (typ.) | 35 ns | — |
| Turn-Off Fall Time (typ.) | 20 ns | — |
| Offset Voltage Rating | 200 V | — |
| Negative Transient Tolerance | dV/dt immune | Yes, dV/dt immune |
| 동작 온도 | -40 C to +125 C | -40 C to +125 C |
| 패키지 | 8-SOIC (3.90 mm body width) | 8-SOIC (DSO-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant | — |
| 기능 | — | Half-Bridge Gate Driver |
| 출력 수 | — | 2 |
| Maximum Offset Voltage (High-Side) | — | 200 V |
| Output Current (Source / Sink) | — | 1 A typical / 1 A typical |
| Propagation Delay (ton/toff) | — | 60 ns typical |
| Delay Matching | — | 20 ns maximum |
| Bootstrap Supply | — | Integrated bootstrap diode, floating channel |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| RoHS 상태 | — | Compliant (PBF suffix) |
| Suitable Drivers | — | MOSFETs and IGBTs |