IR2011STRPBF vs IRS2011STRPBF Perbandingan

Perbandingan bersamaan detil IR2011STRPBF dari Infineon dan IRS2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2011STRPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side and Low-Side (Independent) High-Side and Low-Side, Independent Channels
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune Yes, dV/dt immune
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket 8-SOIC (3.90 mm body width) 8-SOIC (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Fungsi — Half-Bridge Gate Driver
Jumlah Output — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Status RoHS — Compliant (PBF suffix)
Suitable Drivers — MOSFETs and IGBTs

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