IR2011STRPBF vs IRS2011STRPBF Сравнение
Подробное сравнение бок о бок IR2011STRPBF от Infineon и IRS2011STRPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IR2011STRPBF | IRS2011STRPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,71 | $1,55 |
| Configuration | High-Side and Low-Side (Independent) | High-Side and Low-Side, Independent Channels |
| Number of Drivers | 2 (Half-Bridge) | — |
| Peak Source Current | 1 A (typical) | — |
| Peak Sink Current | 1 A (typical) | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Floating Supply Voltage (VBS) | 10 V to 20 V (operational to +200 V) | — |
| Logic Input Compatibility | 3.0 V CMOS or LSTTL | 3.3 V CMOS / LSTTL |
| Propagation Delay (typ.) | 80 ns | — |
| Turn-On Rise Time (typ.) | 35 ns | — |
| Turn-Off Fall Time (typ.) | 20 ns | — |
| Offset Voltage Rating | 200 V | — |
| Negative Transient Tolerance | dV/dt immune | Yes, dV/dt immune |
| Рабочая температура | -40 C to +125 C | -40 C to +125 C |
| Корпус | 8-SOIC (3.90 mm body width) | 8-SOIC (DSO-8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant | — |
| Функция | — | Half-Bridge Gate Driver |
| Количество выходов | — | 2 |
| Maximum Offset Voltage (High-Side) | — | 200 V |
| Output Current (Source / Sink) | — | 1 A typical / 1 A typical |
| Propagation Delay (ton/toff) | — | 60 ns typical |
| Delay Matching | — | 20 ns maximum |
| Bootstrap Supply | — | Integrated bootstrap diode, floating channel |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Статус RoHS | — | Compliant (PBF suffix) |
| Suitable Drivers | — | MOSFETs and IGBTs |