IR2011STRPBF vs IRS2011STRPBF 比較

詳細並排比較 IR2011STRPBF 由 Infineon 與 IRS2011STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 啟用中

規格比較

參數 IR2011STRPBF IRS2011STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side and Low-Side (Independent) High-Side and Low-Side, Independent Channels
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune Yes, dV/dt immune
工作溫度 -40 C to +125 C -40 C to +125 C
封裝 8-SOIC (3.90 mm body width) 8-SOIC (DSO-8)
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
功能 — Half-Bridge Gate Driver
輸出數量 — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
RoHS 狀態 — Compliant (PBF suffix)
Suitable Drivers — MOSFETs and IGBTs

資料表與資源

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