IR2011STRPBF vs IRS2011STRPBF Comparaison
Comparaison détaillée côte à côte de IR2011STRPBF par Infineon et IRS2011STRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IR2011STRPBF | IRS2011STRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,71 | $1,55 |
| Configuration | High-Side and Low-Side (Independent) | High-Side and Low-Side, Independent Channels |
| Number of Drivers | 2 (Half-Bridge) | — |
| Peak Source Current | 1 A (typical) | — |
| Peak Sink Current | 1 A (typical) | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Floating Supply Voltage (VBS) | 10 V to 20 V (operational to +200 V) | — |
| Logic Input Compatibility | 3.0 V CMOS or LSTTL | 3.3 V CMOS / LSTTL |
| Propagation Delay (typ.) | 80 ns | — |
| Turn-On Rise Time (typ.) | 35 ns | — |
| Turn-Off Fall Time (typ.) | 20 ns | — |
| Offset Voltage Rating | 200 V | — |
| Negative Transient Tolerance | dV/dt immune | Yes, dV/dt immune |
| Température de fonctionnement | -40 C to +125 C | -40 C to +125 C |
| Boîtier | 8-SOIC (3.90 mm body width) | 8-SOIC (DSO-8) |
| Type de montage | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant | — |
| Fonction | — | Half-Bridge Gate Driver |
| Nombre de sorties | — | 2 |
| Maximum Offset Voltage (High-Side) | — | 200 V |
| Output Current (Source / Sink) | — | 1 A typical / 1 A typical |
| Propagation Delay (ton/toff) | — | 60 ns typical |
| Delay Matching | — | 20 ns maximum |
| Bootstrap Supply | — | Integrated bootstrap diode, floating channel |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Statut RoHS | — | Compliant (PBF suffix) |
| Suitable Drivers | — | MOSFETs and IGBTs |