IRS2011STRPBF vs IR2011STRPBF Perbandingan

Perbandingan bersamaan detil IRS2011STRPBF dari Infineon dan IR2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2011STRPBF IR2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels High-Side and Low-Side (Independent)
Jumlah Output 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.0 V CMOS or LSTTL
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune dV/dt immune
Paket 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
Suhu Kerja -40 C to +125 C -40 C to +125 C
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix) —
Suitable Drivers MOSFETs and IGBTs —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Lead-Free / RoHS — Lead-Free, RoHS Compliant

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