IRS2011STRPBF vs IR2011STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS2011STRPBF sa pamamagitan ng Infineon at IR2011STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRS2011STRPBF IR2011STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels High-Side and Low-Side (Independent)
Bilang ng Outputs 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.0 V CMOS or LSTTL
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune dV/dt immune
Packhaging 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
Temperature na Operasyon -40 C to +125 C -40 C to +125 C
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (PBF suffix) —
Suitable Drivers MOSFETs and IGBTs —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Lead-Free / RoHS — Lead-Free, RoHS Compliant

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