NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16ER-EK ✓ Hoạt độngNT5CC256M16ER-EK Tóm tắt
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
Bộ thay thế dễ dàng lắp đặt cho NT5CC256M16ER-EK — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với NT5CC256M16ER-EK (cùng hình factor và footprint) — khác nhau ở Supply Voltage, Data Rate, CAS Latency, Package, Density.
NT5CC256M16ER-EKI
✅ Drop-In✗ Hết hàng
$16.7045 / Đơn vị
Xem tài liệu →MT41K256M16TW-107:P
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →AS4C256M16D3LC-10BCN
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IS43TR16512B-107MBL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646E-HCK0
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
H5TQ2G83AFR-PBC
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
NT5CC256M16ER-EK Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4 Gbit |
| Tổ chức | 256M x 16 |
| Điện áp cung cấp | 1.35 V |
| Tốc độ dữ liệu | 933 MHz (DDR3L-1866) |
| Hộp | TFBGA-96 |
| Nhiệt độ hoạt động | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| Giao diện | Parallel |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
Cấu hình chân NT5CC256M16ER-EK
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VDD — Power supply |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VSS — Ground |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VDD — Power supply |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VSS — Ground |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDD — Power supply |
| Chân C2 | DQS0 — Data strobe 0 |
| Chân C3 | DQS0# — Data strobe 0 complement |
| Chân C4 | VSS — Ground |
| Chân C5 | DQS1 — Data strobe 1 |
| Chân C6 | DQS1# — Data strobe 1 complement |
| Chân C7 | VDD — Power supply |
| Chân C8 | DQS2 — Data strobe 2 |
| Chân C9 | DQS2# — Data strobe 2 complement |
| Chân C10 | VSS — Ground |
| Chân C11 | DQS3 — Data strobe 3 |
| Chân C12 | DQS3# — Data strobe 3 complement |
| Chân D1 | VDD — Power supply |
| Chân D2 | A0 — Address input 0 |
| Chân D3 | A1 — Address input 1 |
| Chân D4 | VSS — Ground |
| Chân D5 | A2 — Address input 2 |
| Chân D6 | A3 — Address input 3 |
| Chân D7 | VDD — Power supply |
| Chân D8 | A4 — Address input 4 |
| Chân D9 | A5 — Address input 5 |
| Chân D10 | VSS — Ground |
| Chân D11 | A6 — Address input 6 |
| Chân D12 | A7 — Address input 7 |
| Chân E1 | VDD — Power supply |
| Chân E2 | A8 — Address input 8 |
| Chân E3 | A9 — Address input 9 |
| Chân E4 | VSS — Ground |
| Chân E5 | A10/AP — Address input 10 / Auto precharge |
| Chân E6 | A11 — Address input 11 |
| Chân E7 | VDD — Power supply |
| Chân E8 | A12 — Address input 12 |
| Chân E9 | A13 — Address input 13 |
| Chân E10 | VSS — Ground |
| Chân E11 | A14 — Address input 14 |
| Chân E12 | A15 — Address input 15 |
| Chân F1 | VDD — Power supply |
| Chân F2 | BA0 — Bank address 0 |
| Chân F3 | BA1 — Bank address 1 |
| Chân F4 | VSS — Ground |
| Chân F5 | BA2 — Bank address 2 |
| Chân F6 | RAS# — Row address strobe |
| Chân F7 | VDD — Power supply |
| Chân F8 | CAS# — Column address strobe |
| Chân F9 | WE# — Write enable |
| Chân F10 | VSS — Ground |
| Chân F11 | CS# — Chip select |
| Chân F12 | CKE — Clock enable |
| Chân G1 | VDD — Power supply |
| Chân G2 | ODT — On-die termination |
| Chân G3 | CK — Clock |
| Chân G4 | VSS — Ground |
| Chân G5 | CK# — Clock complement |
| Chân G6 | RESET# — Reset |
| Chân G7 | VDD — Power supply |
| Chân G8 | DM0 — Data mask 0 |
| Chân G9 | DM1 — Data mask 1 |
| Chân G10 | VSS — Ground |
| Chân G11 | DM2 — Data mask 2 |
| Chân G12 | DM3 — Data mask 3 |
| Chân H1 | VDD — Power supply |
| Chân H2 | VDDQ — DQ power supply |
| Chân H3 | VSSQ — DQ ground |
| Chân H4 | VSS — Ground |
| Chân H5 | VDDQ — DQ power supply |
| Chân H6 | VSSQ — DQ ground |
| Chân H7 | VDD — Power supply |
| Chân H8 | VDDQ — DQ power supply |
| Chân H9 | VSSQ — DQ ground |
| Chân H10 | VSS — Ground |
| Chân H11 | VDDQ — DQ power supply |
| Chân H12 | VSSQ — DQ ground |
Ứng dụng tiêu biểu
NT5CC256M16ER-EK phù hợp cho 6 Áp dụngs: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
Được đề xuất
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
Được đề xuất
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
Được đề xuất
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
Được đề xuất
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
Được đề xuất
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho NT5CC256M16ER-EK — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Bảo phân biệt quan trọng
- Low-voltage operation at 1.35V (vsStandard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (vsSome competitors limited to +85°C)
- High density 4Gb in 256Mx16 (vsLower density parts like 2Gb)
Ghi chú thiết kế
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
Thông tin tuân thủ
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
