NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16ER-EK ✓ פעילNT5CC256M16ER-EK סקירה
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
חלופות תחליף ישיר עבור NT5CC256M16ER-EK — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם NT5CC256M16ER-EK (אותו גורם צורה וטביעת רגל) — שונים ב Supply Voltage, Data Rate, CAS Latency, Package, Density.
NT5CC256M16ER-EKI
✅ Drop-In✗ אזל מהמלאי
$16.7045 / יחידה
הצג גיליון נתונים ←MT41K256M16TW-107:P
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←AS4C256M16D3LC-10BCN
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
IS43TR16512B-107MBL
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4B4G1646E-HCK0
✅ Drop-In ⚠️ מפרטים לא מאומתים📋 חלופה להתייחסות (לא בקטלוג)
H5TQ2G83AFR-PBC
✅ Drop-In ⚠️ מפרטים לא מאומתים📋 חלופה להתייחסות (לא בקטלוג)
NT5CC256M16ER-EK דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR3L SDRAM |
| Density | 4 Gbit |
| ארגון | 256M x 16 |
| מתח אספקה | 1.35 V |
| קצב נתונים | 933 MHz (DDR3L-1866) |
| מארז | TFBGA-96 |
| טמפרטורת פעולה | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| ממשק | Parallel |
| סוג הרכבה | Surface Mount |
| סטטוס RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
תצורת פינים של NT5CC256M16ER-EK
| פין A1 | VDD — Power supply |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין A4 | VSS — Ground |
| פין A5 | DQ2 — Data input/output 2 |
| פין A6 | DQ3 — Data input/output 3 |
| פין A7 | VDD — Power supply |
| פין A8 | DQ4 — Data input/output 4 |
| פין A9 | DQ5 — Data input/output 5 |
| פין A10 | VSS — Ground |
| פין A11 | DQ6 — Data input/output 6 |
| פין A12 | DQ7 — Data input/output 7 |
| פין B1 | VDD — Power supply |
| פין B2 | DQ8 — Data input/output 8 |
| פין B3 | DQ9 — Data input/output 9 |
| פין B4 | VSS — Ground |
| פין B5 | DQ10 — Data input/output 10 |
| פין B6 | DQ11 — Data input/output 11 |
| פין B7 | VDD — Power supply |
| פין B8 | DQ12 — Data input/output 12 |
| פין B9 | DQ13 — Data input/output 13 |
| פין B10 | VSS — Ground |
| פין B11 | DQ14 — Data input/output 14 |
| פין B12 | DQ15 — Data input/output 15 |
| פין C1 | VDD — Power supply |
| פין C2 | DQS0 — Data strobe 0 |
| פין C3 | DQS0# — Data strobe 0 complement |
| פין C4 | VSS — Ground |
| פין C5 | DQS1 — Data strobe 1 |
| פין C6 | DQS1# — Data strobe 1 complement |
| פין C7 | VDD — Power supply |
| פין C8 | DQS2 — Data strobe 2 |
| פין C9 | DQS2# — Data strobe 2 complement |
| פין C10 | VSS — Ground |
| פין C11 | DQS3 — Data strobe 3 |
| פין C12 | DQS3# — Data strobe 3 complement |
| פין D1 | VDD — Power supply |
| פין D2 | A0 — Address input 0 |
| פין D3 | A1 — Address input 1 |
| פין D4 | VSS — Ground |
| פין D5 | A2 — Address input 2 |
| פין D6 | A3 — Address input 3 |
| פין D7 | VDD — Power supply |
| פין D8 | A4 — Address input 4 |
| פין D9 | A5 — Address input 5 |
| פין D10 | VSS — Ground |
| פין D11 | A6 — Address input 6 |
| פין D12 | A7 — Address input 7 |
| פין E1 | VDD — Power supply |
| פין E2 | A8 — Address input 8 |
| פין E3 | A9 — Address input 9 |
| פין E4 | VSS — Ground |
| פין E5 | A10/AP — Address input 10 / Auto precharge |
| פין E6 | A11 — Address input 11 |
| פין E7 | VDD — Power supply |
| פין E8 | A12 — Address input 12 |
| פין E9 | A13 — Address input 13 |
| פין E10 | VSS — Ground |
| פין E11 | A14 — Address input 14 |
| פין E12 | A15 — Address input 15 |
| פין F1 | VDD — Power supply |
| פין F2 | BA0 — Bank address 0 |
| פין F3 | BA1 — Bank address 1 |
| פין F4 | VSS — Ground |
| פין F5 | BA2 — Bank address 2 |
| פין F6 | RAS# — Row address strobe |
| פין F7 | VDD — Power supply |
| פין F8 | CAS# — Column address strobe |
| פין F9 | WE# — Write enable |
| פין F10 | VSS — Ground |
| פין F11 | CS# — Chip select |
| פין F12 | CKE — Clock enable |
| פין G1 | VDD — Power supply |
| פין G2 | ODT — On-die termination |
| פין G3 | CK — Clock |
| פין G4 | VSS — Ground |
| פין G5 | CK# — Clock complement |
| פין G6 | RESET# — Reset |
| פין G7 | VDD — Power supply |
| פין G8 | DM0 — Data mask 0 |
| פין G9 | DM1 — Data mask 1 |
| פין G10 | VSS — Ground |
| פין G11 | DM2 — Data mask 2 |
| פין G12 | DM3 — Data mask 3 |
| פין H1 | VDD — Power supply |
| פין H2 | VDDQ — DQ power supply |
| פין H3 | VSSQ — DQ ground |
| פין H4 | VSS — Ground |
| פין H5 | VDDQ — DQ power supply |
| פין H6 | VSSQ — DQ ground |
| פין H7 | VDD — Power supply |
| פין H8 | VDDQ — DQ power supply |
| פין H9 | VSSQ — DQ ground |
| פין H10 | VSS — Ground |
| פין H11 | VDDQ — DQ power supply |
| פין H12 | VSSQ — DQ ground |
יישומים טיפוסיים
NT5CC256M16ER-EK מתאים עבור 6 יישוםs: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
מומלץ
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
מומלץ
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
מומלץ
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
מומלץ
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
מומלץ
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור NT5CC256M16ER-EK — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
מבדילים עיקריים
- Low-voltage operation at 1.35V (לעומתStandard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (לעומתSome competitors limited to +85°C)
- High density 4Gb in 256Mx16 (לעומתLower density parts like 2Gb)
הערות תכנון
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
מידע על תאימות
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
